This file type includes high resolution graphics and schematics. The spread of h FE values in a batch of transistors may be wide enough to cause unreliable performance during mass production of a ...

There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

The revolutionary test technologies in Taurus-PDAT has overcome such difficulties and enables manufacturers of Power MOSFETs and IGBTs to test dynamic AC tests in both characterization and high volume ...

AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they quickly developed a reputation for failure. This is due to what should have made ...

What began as research to improve telephone service became one of the most important inventions in electronics history. In 1945, AT&T’s research division, Bell Labs, began working on technology to ...

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Portland, Ore. — Next-generation semiconductors aim to harness the ballistic electron transport capabilities of pure carbon nanotubes, but until now there has been no easy way to integrate the tubes ...